| 摘要 |
PURPOSE:To form exact patterns with a fewer stages by forming a film covering photoresist patterns having apertures on a substrate surface on which the above- mentioned patterns are formed and removing the film exclusive of the parts formed in the side parts in the apertures. CONSTITUTION:The patterns consisting of the photoresist 12 are directly formed on the surface of the substrate 11 to be formed with the fine patterns. The suitable film 13, such as insulating film, is then deposited on the photoresist 12 from above the same by an ECR-CVD method. The rise of the substrate temp. is suppressed to, for example, <=100 deg.C in this method and, therefore, the film 13 can be directly deposited on the photoresist 12. The film 13 is removed exclusive of the parts formed in the side parts of the apertures of the photoresist after the deposition of the film 12. The removal of the film is executed perpendicularly to the substrate surface by, for example, reactive ion etching of strong anisotropy. The fine patterns consisting of the photoresist 12 and the film 13 are obtd. in such a manner. |
