发明名称 LASER AMPLIFIER FOR LIGHT SINGAL SEMICONDUCTOR HAVING CONTROLLABLE REFLECTING MIRROR
摘要 PURPOSE: To hold suitable characteristics provided in an advancing wave amplifier and synchrnous injection by constituting a reflection prevention film attached to a reflection mirror by a layer for causing primary phase transition at the temperature of an amplifier and an operation wavelength area, controlling the layer by laser beams or electric signals, attaching a control electrode to the reflection prevention film and specifying the reflectance of the reflection mirror. CONSTITUTION: The reflection prevention film 2 attached to one or both of the reflection mirrors is constituted of a single layer or several layers for causing the primary phase transition at the temperature of the amplifier and the operation wavelength area. Then, control is performed by external or internal light beams or external electric signals, a metallic control electrode 3 transparent to the light beams or provided with aαwindowβis attached to the reflection prevention film 2 at the time and the expression of R10 <R2 <R1t , R10 <R20 <R1t and R20 <R2t [in the expressions, the reflectances of an input/output mirrors before phase transition are R10 and R20 , respectively and the reflectances after the phase transition are R1t and R2t ] are established relating to the reflectance of the reflection mirrors 5 and 6. Thus, sensitivity is improved, a noise level is lowered and controllability to the parameter and functionality of the amplifier is enlarged.
申请公布号 JPH03163537(A) 申请公布日期 1991.07.15
申请号 JP19900213792 申请日期 1990.08.14
申请人 TSUENTORARU N TECH TOBUORUCHIESUTOUBUA MORODEJI RINATSUKUSU 发明人 SUBUYATOSURAFU AREKUSANDOROBITSUCHI ROMASHIEBITSUCHI;KONSUTANTEIN FUEDOROBITSUCHI ESUKIN;JIYURI RUBUOBITSUCHI BISUTOROFU;GARIINA AREKUSANDOROFUNA SEMENOBUA
分类号 G02F1/35;G02F3/00;H01S3/105;H01S5/00;H01S5/028;H01S5/50 主分类号 G02F1/35
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