发明名称 MULTILAYER INTERCONNECTION STRUCTURE
摘要 PURPOSE:To prevent the occurrence of the crosstalk between signal lines and output the accurate charge from the signal lines by forming a shield line, which intercepts the electrical effect between signal lines, at the position equally distant from both one signal line and the adjacent signal line, in a separate layer with an insulating layer between thereby forming it in multilayer interconnection structure. CONSTITUTION:Lower signal lines 31 made of chromium (Cr) are formed on an insulating substrate 221 of glass or the like, and a first insulating layer 33a consisting of silicon nitride (SINx) thereon. Moreover, shield lines 37 made of chromium (Cr) are formed side by side, at the positions equally distant from both several lower signal lines 31 and the adjacent lower signal lines 31 and in parallel with the lower signal lines, on a first insulating layer 33a, and a second insulating layer 33b consisting of polyimide is formed thereon, and fur ther upper signal lines 32 made of alumium (Al) is formed on the second insulat ing layer 33b so that it may cross the lower signal lines 31 at right angles. The shield lines 37 are connected to be on a ground level or at constant poten tial.
申请公布号 JPH0442934(A) 申请公布日期 1992.02.13
申请号 JP19900146290 申请日期 1990.06.06
申请人 FUJI XEROX CO LTD 发明人 SAKASAI KAZUHIRO;MIYAKE HIROYUKI
分类号 H01L23/52;H01L21/3205;H01L23/482;H01L23/522;H01L23/528;H01L27/146;H01L29/78;H01L29/786 主分类号 H01L23/52
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