Method for producing an opening in a layered semiconductor structure or a contact hole in an integrated circuit or DRAM

摘要

The method produces an opening in a layered semiconductor structure having a site intended for an opening. A place-saver is produced on the structure from a first material to be selectively etched to the structure under the first material and to a material adjacent the site. A layer of a second material to which the first material is selectively etchable, is produced over the entire surface of the structure having the place-saver. The opening is formed by at least partially removing the layer of the second material above the place-saver, and removing the place-saver by selective etching.