| 摘要 |
PURPOSE: A method for fabricating a field emission display is provided to drive the field emission display under a low voltage by forming finely and uniformly a size of an aperture portion of a gate. CONSTITUTION: An ITO cathode(12) is formed on an upper surface of a substrate(11). A plurality of micro-tips(12a) are formed on an upper surface of the ITO cathode(12). The micro-tips(12a) are formed by depositing Mo. An insulating layer(13) and a gate(14) are stacked on the upper surface of the ITO cathode(12). The insulating layer(13) has a plurality of through-holes(13p) for receiving the micro-tips(12a). The insulating layer(13) is formed with SiO2. The gate(14) is formed by using an electron beam deposition method. An aperture portion(14p) of the gate(14) has the diameter of 0.3 micro meter to 1 micro meter. The electron beams emitted from the micro-tips(12a) are driven under a low voltage by forming accurately the aperture portion(14p) of the gate(14).
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