| 摘要 |
PROBLEM TO BE SOLVED: To improve dry etching resistance by modifying a resist with a certain kind of a drug after development of this resist. SOLUTION: The resist film contg. a resin having a functional group selected from a phenolic hydroxyl group, alcoholic hydroxyl group and carboxylic acid group is irradiated with radiations and is developed. The resist patterns after the development are modified by the group which is a group bondable with the functional group in the resin and of which the carbon density parameter N(Nc-No) (where N denotes a total atomic number, Nc denotes a carbon atomic number and No. denotes an oxygen atomic number) is <4. As a result, the resist patterns having the excellent dry etching resistance are produced. |
