| 摘要 |
<p>PROBLEM TO BE SOLVED: To quickly and highly accurately measure the grain diameter of the crystal grain of a polycrystalline semiconductor film, in a non-destructive and non-contact state. SOLUTION: A polycrystalline semiconductor thin film, whose mean grain diameter and surface rudeness is different, is formed by an energy beam anneal method, and the wavelength dependence of the dielectric constant of the polycrystalline semiconductor thin film is calculated by the use of a spectral ellipsometer. Afterwards, a polycrystalline semiconductor thin film to be evaluated is formed by energy beam annealing method, and the wavelength dependence of the dielectric constant of the polycrystalline semiconductor thin film to be evaluated is calculated with the thickness of the film. Then, the wavelength dependence of the dielectric constant is compared between the polycrystalline semiconductor thin film to be evaluated and a polycrystalline semiconductor thin film whose mean grain diameter is at least different, and the correlation with a full width at half maximum of the peak value of the calculated dielectric constant is calculated, so that the characteristics of the polycrystalline semiconductor thin film are inspected.</p> |
