发明名称 INSULATION-GATE BIPOLAR TRANSISTOR MODULE AND THE SAME WITH DRIVE CIRCUIT
摘要 PROBLEM TO BE SOLVED: To directly and detachably mount a drive circuit being matched to the operating conditions of an insulation-gate bipolar transistors IGBT module, by providing a level difference surface at the side part of a collector terminal or an emitter terminal, arranging a circuit connection terminal at it, and surrounding a plurality of IGBTs with an insulation material for forming an assembly. SOLUTION: A plurality of IGBTs are gathered inside. A member-placing space 17, where a plane being in parallel with a seat surface is formed, is secured at the side part of an emitter terminal 12, and a collector terminal 11 and an emitter terminal 12 of each IGBT are provided individually. Also, an emitter terminal 13 for connecting a drive circuit, a gate terminal 14 for connecting a drive circuit, and a collector terminal 15 for connecting a drive circuit are connected to a circuit connection terminal 16 together, and the surrounding of the gathered IGBTs is sealed by an insulation member 19, thus directly and detachably placing a drive circuit module which is matched with the conditions to be used for the member-placing space 17, and preventing noise from penetrating through a wiring part.
申请公布号 JPH11317495(A) 申请公布日期 1999.11.16
申请号 JP19980123431 申请日期 1998.05.06
申请人 MITSUBISHI ELECTRIC CORP 发明人 CHIKAI SATOSHI
分类号 H01L25/07;H01L25/18;(IPC1-7):H01L25/07 主分类号 H01L25/07
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