| 摘要 |
A memory cell structure comprises a magnetizable yoke (J) surrounding one of the intersecting lines (L1, L2) at a magnetoresistive memory element (SE) location. A memory cell structure comprises a magnetoresistive memory element (SE) located at the intersection of first and second lines (L1, L2) and a yoke (J) of magnetizable material with a relative permeability of /-10 which partially surrounds one of the lines (L2), the magnetic flux circuit through the yoke being completed through the memory element. An Independent claim is also included for production of the above memory cell structure. Preferred Features: The memory element comprises one or more of Fe, Ni, Co, Cr, Mn, Gd and Dy or one or more of Al2O3, NiO, HfO2, TiO2, NbO and SiO2, while the yoke comprises one or more of Fe, Ni, Co, Cr, Mn, Gd and Dy.
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