发明名称 Reference voltage generator for an integrated circuit such as a dynamic random access memory (DRAM)
摘要 <p>A reference voltage generator includes a voltage divider connected to a voltage supply and a feedback buffer amplifier. The divider supplies at least one voltage output signal to the feedback buffer amplifier under control of a feedback control signal supplied by the feedback buffer amplifier. The reference voltage generator may include a delay element coupled between the voltage divider and the feedback buffer amplifier in-line with the feedback control signal and a low impedance output buffer that receives the voltage output signal from the voltage divider and supplies the reference voltage at an output node. The reference voltage may be supplied to the reference plates of bit storage capacitors within the memory cells. The storage capacitors can be protected by including a clamping circuit that maintains the output node at a voltage between the voltages of the two voltage supply terminals. &lt;IMAGE&gt;</p>
申请公布号 EP1031990(A2) 申请公布日期 2000.08.30
申请号 EP20000301259 申请日期 2000.02.17
申请人 STMICROELECTRONICS, INC. 发明人 GURITZ, ELMER HENRY
分类号 G11C11/407;G05F1/46;G05F3/24;G11C7/14;G11C11/404;G11C11/4074;G11C11/4099;H01L21/822;H01L27/04;(IPC1-7):G11C11/409 主分类号 G11C11/407
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