发明名称 CONTROL OF MELT AND GROWTH OF CRYSTAL
摘要 PROBLEM TO BE SOLVED: To suppress the irregular temperature fluctuation in melt which disturbs uniform crystal growth. SOLUTION: In a floating zone(FZ) method, the partial pressure of oxygen, or the like, among ingredients contained in an atmosphere surrounding a melt is controlled so as to be especially >=1.8 E(-5) MPa. The temperature oscillation in the melt is made to have a single period, the turbulence of the temperature oscillation disappears, and a highly uniform crystal can be formed. In a Czochralski method, also, the partial pressure of oxygen, or the like, among ingredients contained in an atmosphere surrounding a melt is controlled so as for the surface oxygen pressure to have an elevated pressure. The intensity of a Marangoni convection on the melt surface is reduced, and the temperature oscillation in the melt is made to have a single period, the turbulence of the temperature oscillation disappears and also oxygen concentration in a crystal can be controlled, and a highly uniform crystal can be formed.
申请公布号 JP2000335995(A) 申请公布日期 2000.12.05
申请号 JP20000074078 申请日期 2000.03.16
申请人 NEC CORP;JAPAN SPACE FORUM;NATL SPACE DEVELOPMENT AGENCY OF JAPAN 发明人 AZAMI TAKEFUMI;NAKAMURA ARATA;HIBIYA TAKETOSHI
分类号 C30B15/20;C30B13/28;C30B29/06;H01L21/208;(IPC1-7):C30B15/20 主分类号 C30B15/20
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