RESIST MATERIAL AND PATTERN FORMING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a resist material sensitive to high energy beams, excellent in sensitivity, resolution and etching resistance and useful in microfabrication with electron beams or far UV and to provide a pattern forming method using the resist material. SOLUTION: The resist material contains a hydrogenated body of a ring- opened metathesis polymer represented by formula [1] as a base resin.