发明名称 POLYMER COMPOUND FOR PHOTORESIST AND RESIN COMPOSITION FOR PHOTORESIST
摘要 PROBLEM TO BE SOLVED: To obtain a polymer compound for photoresist which is excellent in dry etching resistance, adhesion to substrates, and alkali solubility and exhibits a high solubility in propylene glycol monomethyl ether acetate(PGMEA). SOLUTION: This polymer compound contains (A) 22-40 mol% monomer units represented by formula (I), (B) 20-38 mol% monomer units represented by formula (II), and (C) 22-58 mol% at least one kind of monomer units selected from monomer units represented by formulae (IIIa) and (IIIb). In those formulae, R is H or methyl; and R1, R2, and R3 are each independently a 1-3C alkyl.
申请公布号 JP2002201232(A) 申请公布日期 2002.07.19
申请号 JP20010186493 申请日期 2001.06.20
申请人 DAICEL CHEM IND LTD 发明人 TSUTSUMI KIYOHARU
分类号 G03F7/039;C08F220/28;C08J3/14 主分类号 G03F7/039
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