MULTI-STEP CHEMICAL MECHANICAL POLISHING OF A GATE AREA IN A FINFET
摘要
A method of manufacturing a MOSFET type semiconductor device includes planarizing a gate material layer (320) that is deposited over a channel. The planarization is performed in a multi-step process that includes an initial "rough" planarization and then a "fine" planarization. The slurry used for the finer planarization may include added material that tends to adhere to low areas of the gate material.
申请公布号
WO2004112105(A3)
申请公布日期
2005.02.24
申请号
WO2004US17724
申请日期
2004.06.05
申请人
ADVANCED MICRO DEVICES, INC.;ACHUTHAN, KRISHNASHREE;AHMED, SHIBLY, S.;WANG, HAIHONG;YU, BIN
发明人
ACHUTHAN, KRISHNASHREE;AHMED, SHIBLY, S.;WANG, HAIHONG;YU, BIN