SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which is high in reliability by suppressing the generation of a void in a trench. SOLUTION: A gate trench 20 is first formed to pass through an n+-source region 31 and a p--body region 41 and reach an n--drift region 12 at its bottom. Next, a gate oxide film 21 is formed and then a polycrystalline silicon film 221P is formed on the gate oxide film 21 (step D). An amorphous silicon film 222A is formed on the silicon film 221P to fill the interior of the gate trench 20 (step E). The laminate is subjected to activation annealing to make the silicon film 221P integral with the silicon film 222A to form a polycrystalline silicon layer 22P in the gate trench 20 (step F). COPYRIGHT: (C)2005,JPO&NCIPI