NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a nitride semiconductor light emitting element on which the generation of cracks is suppressed and a nitride semiconductor growth layer having high surface flatness is formed. SOLUTION: The nitride semiconductor light emitting element is provided with a nitride semiconductor substrate having grooves and hills which are formed on the upper surface so as to be extended like stripes, and a plurality of nitride semiconductor layers laminated on the nitride semiconductor substrate. The method for manufacturing the nitride semiconductor light emitting element is provided with a process for forming a flat area of which the width is≥10μm on at least one of the grooves and the hills by laminating the nitride semiconductor growth part on the nitride semiconductor substrate, so that the height of the nitride semiconductor growth layer laminated on the groove is lower than the height of the nitride semiconductor growth layer laminated on the hill. COPYRIGHT: (C)2005,JPO&NCIPI