| 摘要 |
PROBLEM TO BE SOLVED: To provide a switching element containing a high speed diode which has no need of outside-attaching an anti-parallel diode in an SiC cascode element. SOLUTION: The semiconductor device comprises a first semiconductor layer 2 formed on an SiC substrate 1, a second semiconductor layer 3 formed on the first semiconductor layer 2, a first semiconductor region 4 selectively buried in the boundary between the first and second semiconductor layers 2, 3, a second semiconductor region 5 of a first conductivity type selectively formed on the second semiconductor layer surface, a source electrode 6 selectively formed on the second semiconductor layer 3 to form an ohmic contact with the first and second semiconductor regions 4, 5, a gate electrode 7 selectively formed on the second semiconductor layer 3 to form a Schottky contact with the second semiconductor layer 3, and a drain electrode 8 formed on the backside of the SiC substrate 1 to form an Ohmic contact with the substrate 1. COPYRIGHT: (C)2005,JPO&NCIPI
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