发明名称 |
Electrically programmable memory element with improved contacts |
摘要 |
A memory element comprising a volume of phase change memory material; and first and second contact for supplying an electrical signal to the memory material, wherein the first contact comprises a conductive sidewall spacer. Alternately, the first contact may comprise a contact layer having an edge adjacent to the memory material.
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申请公布号 |
US6969866(B1) |
申请公布日期 |
2005.11.29 |
申请号 |
US19990276273 |
申请日期 |
1999.03.25 |
申请人 |
OVONYX, INC. |
发明人 |
LOWREY TYLER;OVSHINSKY STANFORD R.;WICKER GUY C.;KLERSY PATRICK J.;PASHMAKOV BOIL;CZUBATYJ WOLODYMYR;KOSTYLEV SERGEY A. |
分类号 |
G11C11/56;H01L27/24;H01L45/00;(IPC1-7):H01L47/00 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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