| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce a current flow required for spin transfer writing. <P>SOLUTION: The magneto-resistance effect element comprises: a first fixed magnetization layer 4 with a fixed magnetization direction; a free magnetization layer 6 with a variable magnetization direction; a tunnel barrier layer 5 formed between the first fixed magnetization layer and a free magnetization layer; a second fixed magnetization layer 8 which is formed on the opposite side of the free magnetization layer from the tunnel barrier layer and has its magnetization direction fixed in a direction nearly antiparallel with the magnetization direction of the first fixed magnetization layer; and a non-magnetic layer 7 formed between the free magnetization layer and the second fixed magnetization layer. If the second fixed magnetization layer is formed of a ferromagnetic material containing Co, a material containing at least one element selected from Zr, Hf, Rh, Ag, and Au is used for the non-magnetic layer; if the second fixed magnetization layer is formed of a ferromagnetic material containing Fe, a material containing at least one element selected from Rh, Pt, Ir, Al, Ag, and Au is used for the non-magnetic layer; and if the second fixed magnetization layer is formed of a ferromagnetic material containing Ni, a material containing at least one element selected from Zr, Hf, Au, and Ag is used for the non-magnetic layer. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
