| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an electrode structure which improves performance and reliability of an element in a power semiconductor element. <P>SOLUTION: In the power semiconductor element, a first electrode 12 is formed on a surface of a semiconductor layer. An interlayer insulating layer 11 is formed on the surface of the first electrode 12. A second electrode 10 is provided right above the first electrode 11 on the surface of the interlayer insulating layer 11. Accordingly, since the area utilization ratio of the element is improved, damage of bonding is alleviated, and the performance and the reliability of the power semiconductor element are improved. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
