| 摘要 |
A flash memory having word line decoding and selection architecture is described. The flash memory include first and second sectors of memory cells, first and second local driver circuits, first, second and third decoding circuits, and a driving circuit. The first sectors of first memory cells include a first plurality of word lines coupled to the first memory cells, each being capable of being a first selected word line. The second sectors of second memory cells include a similar Local driver circuits are independently coupled to each word line of the first and second pluralities of word lines of the first sectors. Each decoding circuits comprise a first and a second side of decoding circuitry. The first side of decoding circuitry activates a first selected plurality of local driver circuits and the second side of decoding circuitry activates a second selected plurality of local driver circuits. The second decoding circuits are coupled to the first local driver circuits and supply a first boosted voltage to the first selected word line coupled to a first local driver circuit. The third decoding circuits are coupled to the second local driver circuits and supply a second boosted voltage to the second selected word line. The driving circuit supplies a series of boosted voltages to the first decoding circuits, the second decoding circuits, the third decoding circuits, the first local driver circuits, and the second local driver circuits. |
