| 发明名称 |
Method of programming memory device |
| 摘要 |
Provided is a method of programming a memory device. The method includes performing a program voltage applying operation; and performing a verifying operation, wherein a plurality of verifying operations are consecutively performed after a program voltage applying operation.
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| 申请公布号 |
US2008316820(A1) |
申请公布日期 |
2008.12.25 |
| 申请号 |
US20080213323 |
申请日期 |
2008.06.18 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SEOL KWANG-SOO;PARK SANG-JIN |
| 分类号 |
G11C16/06;G11C11/34 |
主分类号 |
G11C16/06 |
| 代理机构 |
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