| 摘要 |
A variable attenuator, used with high frequency, in which variable attenuation per stage is large, is provided. The variable attenuator includes: a MOSFET 12 having a gate, a drain, a source, and a body; an attenuation control circuit 14; and a temperature characteristics compensation circuit 21. The attenuation control circuit 14 supplies a control voltage to the gate, the drain, and the source. The temperature characteristics compensation circuit 21 supplies a temperature compensation voltage to the body. An input terminal and an output terminal are connected to the drain and the source of the MOSFET 12. The temperature characteristics compensation circuit 21, in accordance with an operating temperature of the MOSFET 12, controls a voltage to be supplied to the body and adjusts, based on a relation between a body voltage and a gate voltage, a resistance value of a current flowing between the input terminal and the output terminal.
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