发明名称 |
METHOD FOR PATTERNING A SEQUENCE OF LAYERS AND SEMICONDUCTOR LASER DEVICE |
摘要 |
The invention relates to a method for patterning a sequence of layers and to a semiconductor laser device. In said method, at least one trench (4) is created in the sequence of layers (10) by two plasma etching methods. The semiconductor laser device comprises a sequence of layers (10), which is formed using a semiconductor material, and two trenches (4) in the sequence of layers (10), said trenches laterally delimiting a ridge waveguide (30). Each of the trenches (4) is delimited on the side facing away from the ridge waveguide (30) by a region (A) of the sequence of layers (10). |
申请公布号 |
WO2016062477(A3) |
申请公布日期 |
2016.06.16 |
申请号 |
WO2015EP71610 |
申请日期 |
2015.09.21 |
申请人 |
OSRAM OPTO SEMICONDUCTORS GMBH |
发明人 |
RUMBOLZ, CHRISTIAN;GERHARD, SVEN |
分类号 |
H01S5/20;H01L21/762 |
主分类号 |
H01S5/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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