发明名称 |
Phosphor and light-emitting device |
摘要 |
A high-brightness phosphor having high-temperature characteristics and long-term reliability, and a white light-emitting device using this phosphor are provided. The phosphor contains a silicate phosphor (A) having a peak wavelength of at least 525 nm but not higher than 535 nm and fluorescence intensity of at least 250% but not higher than 270%; an oxynitride phosphor (B) having a peak wavelength of at least 540 nm but not higher than 545 nm and fluorescence intensity of at least 260% but not higher than 280%; and an nitride phosphor (C) having a peak wavelength of at least 615 nm but not higher than 625 nm, wherein the amount of the silicate phosphor (A) is at least 20% but not higher than 35% by mass, the amount of the oxynitride phosphor (B) is at least 50% but not higher than 70% by mass, and the amount of the nitride phosphor (C) is at least 10% but not higher than 20% by mass. |
申请公布号 |
US9401459(B2) |
申请公布日期 |
2016.07.26 |
申请号 |
US201214377487 |
申请日期 |
2012.08.09 |
申请人 |
DENKA COMPANY LIMITED |
发明人 |
Kobayashi Keita;Ichikawa Kohki;Fushii Yasuhito;Emoto Hideyuku;Yamada Suzuya |
分类号 |
H01L33/00;H01L33/50;C09K11/08;C09K11/59;C09K11/62;C09K11/64;H01L33/48 |
主分类号 |
H01L33/00 |
代理机构 |
Stein IP, LLC |
代理人 |
Stein IP, LLC |
主权项 |
1. A phosphor, comprising: a silicate phosphor (A) having a peak wavelength at least 525 nm but not higher than 535 nm and fluorescence intensity at least 250% but not higher than 270%;
an oxynitride phosphor (B) having a peak wavelength at least 540 nm but not higher than 545 nm and fluorescence intensity at least 260% but not higher than 280%; and a nitride phosphor (C) having a peak wavelength at least 615 nm but not higher than 625 nm, wherein, the ratio of the silicate phosphor (A) is at least 20% but not higher than 35% by mass; the ratio of the oxynitride phosphor (B) is at least 50% but not higher than 70% by mass; and the ratio of the nitride phosphor (C) is at least 10% but not higher than 20% by mass. |
地址 |
Tokyo JP |