| 摘要 |
A method of manufacturing a semiconductor device, includes: forming a film containing a predetermined element on a substrate by performing a cycle a predetermined number of times, the cycle including: supplying a first precursor containing the predetermined element and a halogen group to the substrate; supplying a second precursor containing the predetermined element and an amino group to the substrate; and supplying a reducing agent not containing halogen, nitrogen and carbon to the substrate. |
