| 摘要 |
PROBLEM TO BE SOLVED: To provide a wafer generation method capable of efficiently generating a wafer from an ingot.SOLUTION: A wafer generation method for generating a wafer from a hexagonal single crystal ingot comprises a separation starting point formation step of positioning a condensation point of a laser beam in a wavelength having permeability to the hexagonal single crystal ingot to a depth equivalent to the thickness of the wafer to be generated from the surface of the ingot, irradiating the surface of the ingot with the laser beam by relatively moving the condensation point and the hexagonal single crystal ingot, and forming a separation starting point composed of a modified layer parallel to the surface and a crack extending along a c surface from the modified layer. The separation starting point formation step includes: a first separation starting point formation step of scanning the laser beam in a forward path and a backward path from the scan start point to the scan end point of the ingot; and a second separation starting point formation step of starting scanning from the scan end point and scanning the laser beam in the forward path and the backward path to the scan start point.SELECTED DRAWING: Figure 12 |
