| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for making an SiC single crystal by which an SiC single crystal is grown using a solution growth method, and at the time, the height of a step formed on a crystal growth surface can be reduced.SOLUTION: When an SiC single crystal is grown by developing a step comprising SiC on the crystal growth surface of an SiC seed crystal in a material solution using a liquid phase growth method, at least a part of step bunching is dissolved by applying external force to the material solution in order to flow the material solution in a direction opposite to the developing direction of the step. |
