发明名称 |
HEAT TREATMENT SYSTEM, HEAT TREATMENT METHOD, AND PROGRAM |
摘要 |
The present invention relates to a heat treatment system, a heat treatment method, and a program to control an in-plane shape of a treatment object. The heat treatment system (1) comprises: a heater unit (10) which heats the inside of a reaction pipe (2) accommodating a plurality of semiconductor wafers (W); a heat treatment condition storage means which stores a heat treatment condition according to heat treatment; a heat treatment change model storage means which stores a heat treatment change model representing the relative change in temperature inside the reaction pipe (2) and change in heat treatment result; a heat treatment performing means which performs a heat treatment result in the heat treatment condition; a heat treatment result reception means which receives the performed heat treatment result; and an optimal temperature calculation means which calculates a targeted heat treatment result about an in-plane shape of the semiconductor wafer (W) on the basis of the shape of the aimed heat treatment result, and calculates an aimed heat treatment result about the calculated in-plane shape and optimal temperature which is the aimed heat treatment result on the basis of the heat treatment change model. |
申请公布号 |
KR20160103528(A) |
申请公布日期 |
2016.09.01 |
申请号 |
KR20160020712 |
申请日期 |
2016.02.22 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
TAKENAGA YUICHI;OHTA HIROICHI;SEKISAWA SHINGO |
分类号 |
H01L21/324;H01L21/02;H01L21/16;H01L21/67 |
主分类号 |
H01L21/324 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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