发明名称 HEAT TREATMENT SYSTEM, HEAT TREATMENT METHOD, AND PROGRAM
摘要 The present invention relates to a heat treatment system, a heat treatment method, and a program to control an in-plane shape of a treatment object. The heat treatment system (1) comprises: a heater unit (10) which heats the inside of a reaction pipe (2) accommodating a plurality of semiconductor wafers (W); a heat treatment condition storage means which stores a heat treatment condition according to heat treatment; a heat treatment change model storage means which stores a heat treatment change model representing the relative change in temperature inside the reaction pipe (2) and change in heat treatment result; a heat treatment performing means which performs a heat treatment result in the heat treatment condition; a heat treatment result reception means which receives the performed heat treatment result; and an optimal temperature calculation means which calculates a targeted heat treatment result about an in-plane shape of the semiconductor wafer (W) on the basis of the shape of the aimed heat treatment result, and calculates an aimed heat treatment result about the calculated in-plane shape and optimal temperature which is the aimed heat treatment result on the basis of the heat treatment change model.
申请公布号 KR20160103528(A) 申请公布日期 2016.09.01
申请号 KR20160020712 申请日期 2016.02.22
申请人 TOKYO ELECTRON LIMITED 发明人 TAKENAGA YUICHI;OHTA HIROICHI;SEKISAWA SHINGO
分类号 H01L21/324;H01L21/02;H01L21/16;H01L21/67 主分类号 H01L21/324
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