发明名称 Silicon carbide powder comprising alpha phase silicon carbide granules of trimodal particle size distribution and low impurities
摘要 A silicon carbide powder includes at least one group selected from a first group comprising an alpha phase silicon carbide pulverulent body of which a granule size (D50) is greater than 0 μm and less than 45 μm with impurities less than 10 ppm, a second group comprising an alpha phase silicon carbide pulverulent body of which a granule size is greater than 45 μm and less than 75 μm with impurities less than 10 ppm, and a third group comprising an alpha phase silicon carbide pulverulent body of which a granule size is greater than 75 μm and less than 110 μm with impurities less than 10 ppm. In addition, a method for preparing a silicon carbide powder includes adding seeds to a beta silicon carbide powder, and forming an alpha silicon carbide powder by heat treating the beta silicon carbide powder.
申请公布号 US9440859(B2) 申请公布日期 2016.09.13
申请号 US201314408151 申请日期 2013.07.10
申请人 LG INNOTEK CO., LTD;RESEARCH BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY 发明人 Kim Byung Sook;Shin Dong Geun;Han Jung Eun;Min Kyoung Seok
分类号 C01B31/36;B32B5/16;C04B35/565 主分类号 C01B31/36
代理机构 LRK Patent Law Firm 代理人 LRK Patent Law Firm
主权项 1. A silicon carbide powder comprising at least one group selected from a first group comprising an alpha phase silicon carbide pulverulent body of which a granule size (D50) is greater than 0 μm and less than 45 μm with impurities less than 10 ppm, a second group comprising an alpha phase silicon carbide pulverulent body of which a granule size is greater than 45 μm and less than 75 μm with impurities less than 10 ppm, and a third group comprising an alpha phase silicon carbide pulverulent body of which a granule size is greater than 75 μm and less than 110 μm with impurities less than 10 ppm.
地址 Seoul KR