发明名称 |
Silicon carbide powder comprising alpha phase silicon carbide granules of trimodal particle size distribution and low impurities |
摘要 |
A silicon carbide powder includes at least one group selected from a first group comprising an alpha phase silicon carbide pulverulent body of which a granule size (D50) is greater than 0 μm and less than 45 μm with impurities less than 10 ppm, a second group comprising an alpha phase silicon carbide pulverulent body of which a granule size is greater than 45 μm and less than 75 μm with impurities less than 10 ppm, and a third group comprising an alpha phase silicon carbide pulverulent body of which a granule size is greater than 75 μm and less than 110 μm with impurities less than 10 ppm. In addition, a method for preparing a silicon carbide powder includes adding seeds to a beta silicon carbide powder, and forming an alpha silicon carbide powder by heat treating the beta silicon carbide powder. |
申请公布号 |
US9440859(B2) |
申请公布日期 |
2016.09.13 |
申请号 |
US201314408151 |
申请日期 |
2013.07.10 |
申请人 |
LG INNOTEK CO., LTD;RESEARCH BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY |
发明人 |
Kim Byung Sook;Shin Dong Geun;Han Jung Eun;Min Kyoung Seok |
分类号 |
C01B31/36;B32B5/16;C04B35/565 |
主分类号 |
C01B31/36 |
代理机构 |
LRK Patent Law Firm |
代理人 |
LRK Patent Law Firm |
主权项 |
1. A silicon carbide powder comprising at least one group selected from a first group comprising an alpha phase silicon carbide pulverulent body of which a granule size (D50) is greater than 0 μm and less than 45 μm with impurities less than 10 ppm, a second group comprising an alpha phase silicon carbide pulverulent body of which a granule size is greater than 45 μm and less than 75 μm with impurities less than 10 ppm, and a third group comprising an alpha phase silicon carbide pulverulent body of which a granule size is greater than 75 μm and less than 110 μm with impurities less than 10 ppm. |
地址 |
Seoul KR |