发明名称 Semiconductor device and method of producing the same
摘要 A QFP adapted to lowering the heat resistance and increasing the number of pins, and a method of producing the same. The QFP includes a heat-radiating metal plate having bumpers formed at the four corners thereof as a unitary structure, a semiconductor chip mounted on the heat-radiating metal plate, leads provided on the heat-radiating metal plate and surrounding the peripheries of the semiconductor chip, bonding wires for connecting the leads to the semiconductor chip, and a sealing resin member for sealing part of the semiconductor chip, inner leads of the leads, bonding wires and part of the heat-radiating metal plate. The tips of the bumpers integrally formed with the heat-radiating metal plate are positioned outside the tips of the outer leads that are protruding from the sealing resin member. In the QFP producing method, the heat- radiating metal plate having the bumpers and the lead frame having the leads are secured outside the sealing resin member.
申请公布号 US2002096791(A1) 申请公布日期 2002.07.25
申请号 US20020103988 申请日期 2002.03.25
申请人 HITACHI, LTD. 发明人 MUTO KUNIHARU;NISHIKIZAWA ATSUSHI;TSUCHIYA JYUNICHI;HATA TOSHIYUKI;KOIKE NOBUYA;SHIMIZU ICHIO
分类号 H01L23/28;H01L21/44;H01L21/48;H01L21/50;H01L21/56;H01L21/60;H01L23/02;H01L23/29;H01L23/433;H01L23/495;(IPC1-7):H01L21/44 主分类号 H01L23/28
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