| 摘要 |
PURPOSE:To render a space between wirings flat by a method wherein a side face of an aluminum film left between aluminum wirings and on the side faces of them which are formed through grooves is anodized. CONSTITUTION:An aluminum layer 14 is formed on a semiconductor substrate 11. And, grooves are provided on the aluminum layer 14 in such a manner that their bases reach the semiconductor substrate 11 for the formation of an aluminum wiring 14a. Next, a side face of an aluminum film 14b left on the side face of the aluminum wiring 14a and on the space between the aluminum wirings is anodized into a porous alumina layer 16. When the porous alumina layer 16 is formed through anodization, aluminum expands 1.5 times as large in volume as it is when turning into porous alumina, so that a groove 20A between aluminum films is filled with the porous alumina 16. By these processes, an insulating layer between wirings is rendered flat.
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