| 摘要 |
<p>PURPOSE:To make it possible to define a pattern of a gate bus line and a gate electrode with one resist film, by using image reversal photoresist and by combining negative treatment of exposure, reversal bake and development, and possitive treatment of exposure and development. CONSTITUTION:Masking exposure is applied to an image reversal photoresist film to coat a region which forms a gate bus line GB and a gate electrode G then a resist film 1 consisting of unexposed area is formed. Rear exposure is applied to the film 1 from the rear of a substrate and the crossing section of the gate bus line GB and a drain bus line DB of the film 1 is exposed to form an exposed area 3 and an unexposed area 2. Reversal bake is applied to make the exposed area 3 insoluble and the unexposed areas 2, 2' insoluble to development solution. Then entire exposure and development treatment are applied to eliminate the unexposed areas 2, 2' and to form a resist pattern 5 consisting of exposed areas 3, 4. A pattern of the gate bus line GB and the gate electrode G connected thereto is defined thereby with one resist film 5.</p> |
