摘要 |
<p>PURPOSE:To reduce a light excitation current occurring in the channel area of a MOS transistor by forming an Al film on the upper part of the gate electrode of the MOS transistor through an insulating film. CONSTITUTION:The light shielding Al film 10 is provided on the gate electrode 7 of the MOS transistor through the insulating film 9 and a light source is positioned on a glass plate 14 side. When the light source is arranged on the upper part of the MOS transistor, light from the light source is nearly completely intercepted with the aid of the Al thin film 10. Thus, the occurrence of light excitation current in the channel area 3 is suppressed and the leak current of the MOS transistor is reduced, then the image quality on the image displaying device can be drastically improved.</p> |