| 摘要 |
A method for making a semiconductor device having an anhydrous ferroelectric thin-film obtained from an anhydrous sol-gel solution. An anhydrous PZT sol-gel solution is provided, wherein the sol-gel solution is prepared from lead (II) acetate anhydrous, which is heated with zirconium and titanium precursors to form a gel. The sol-gel solution is prepared without hydrolyzing the solution to obtain precursor complexes which do not contain water. The sol-gel is then applied to a semiconductor substrate and crystallized to form a ferroelectric thin-film. In a preferred embodiment, one or more steps of preparing the sol-gel solution, applying the sol-gel solution, and crystallizing the sol-gel solution are carried out in the presence of an oxygen-containing ambient.
|
