发明名称 QMOS DIGITAL LOGIC CIRCUITS
摘要 Circuit designs of basic digital logic gates are disclosed using Resonant Tunneling Diodes (TRDs) (620, 670) and MOSFETs (600, 605, 615, 625, 630, 640, 655, 660, 665, 675, 680) which reduces the number of devices used for logic design, while exploiting the high speed negative differential resistance (NDR) characteristic of RTDs. Such logic circuits include NAND, NOR, AND, and OR gates and Minority/Majority circuits, which are used in full adder circuits. By implementing RTDs along with conventional MOSFETs, the use of series connected MOSFETs, which results in low output rise and fall times, especially for a large number of inputs, can be avoided. Furthermore, the RTD logic design styles do not require the use of resistors or any elaborate clocking or resetting scheme.
申请公布号 WO9845948(A1) 申请公布日期 1998.10.15
申请号 WO1998US06309 申请日期 1998.04.02
申请人 THE UNIVERSITY OF TEXAS SYSTEM 发明人 BALSARA, PORAS, T.;KOSHY, KAMAL, J.
分类号 H03K19/0948;H03K19/10;(IPC1-7):H03K19/195;H03K19/096;H03K19/094;H03K19/20 主分类号 H03K19/0948
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