Method of producing a semiconductor device

摘要

A method of producing a semiconductor device includes the step of: preparing a wafer on which a protective film is formed except for the area of an aluminum electrode formed on the wafer; etching an oxide film present on the aluminum electrode formed on the wafer thereby removing the oxide film; forming a metal film on the wafer; put an adhesive tape on the wafer so that the adhesive tape adheres to the wafer; and peeling off the adhesive tape. Since the adhesion between the metal film and the protective film is weak and the adhesion between the metal film and the aluminum electrode is strong, the metal film on the protective film is peeled off while the portion of the metal film present on the aluminum electrode remains unremoved. The metal film remaining on the aluminum electrode has good conformability with a solder bump, and thus it is possible to obtain good wettability between the solder bump and the aluminum electrode in the process of forming the solder bump on the aluminum electrode. Thus, the invention provides an easy and inexpensive technique to solve the problem of poor adhesion between the bump and the aluminum electrode.