| 摘要 |
<p>PURPOSE: To form thin film transistors of high performance on an inexpensive glass substrate by specifying the processing temp. in the production processes except for the process to irradiate the substrate with laser beams or electron beams. CONSTITUTION: The production processes are carried out at <=600 deg.C. A polysilicon 51 is grown on a glass substrate 57 and subjected to photoetching to form data lines 50, address lines 51 and capacitor electrodes 53. Then a SiO2 film 55 is grown by thermal oxidation as gate insulating films and dielectric films of the capacitors. Then a second polysilicon layer 52 is deposited and patterned by photoetching, P ions are implanted in the area except for the channel part 54 to form source drain electrodes 52, data lines 50 and driving electrodes 52 which also act as electrodes for capacitors. The address line 51 acts as the gate of the channel 54 of the transistor which uses the data line 50 as the source and the driving electrode and capacitor electrode 52 as the drain.</p> |
