发明名称 |
THIN FILM TRANSISTORS AND ELECTRONIC DEVICES COMPRISING SUCH |
摘要 |
In an electronic device, such as an active matrix display device or the like, comprising a top gate amorphous silicon thin film transistor (10) in which one or both of the source and drain electrodes (15, 16) are of transparent conductive material such as ITO, the PECVD deposited semiconductor layer (18) extending over and between the source and drain electrodes of the TFT is formed as first and second sub-layers (18A, 18B), using different source gas compositions. A noble inert gas such as helium is used as dilutant in forming the first sub-layer adjacent the source and drain electrodes to avoid reduction problems while hydrogen is used as the dilutant in forming the second sub-layer to achieve high stability and mobility characteristics in the completed transistor. |
申请公布号 |
WO9931720(A3) |
申请公布日期 |
1999.08.26 |
申请号 |
WO1998IB01935 |
申请日期 |
1998.12.03 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V.;PHILIPS AB |
发明人 |
DEANE, STEVEN, CHARLES;FRENCH, IAN, DOUGLAS |
分类号 |
G02F1/136;G02F1/1368;G09F9/30;H01L21/205;H01L21/336;H01L29/786 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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