| 摘要 |
A polishing method and apparatus for reducing wafer taper in single-wafer polishing are disclosed, by which the whole processes from measurement of thickness profile of wafers (9) and polishing thereof are fully automated and the working efficiency is not only improved, but also the polished wafers (9) are produced with high accuracy in reduction of the taper thereof. The present invention is executed as follows: Thickness profiles of a wafer (9) are measured with a measurement instrument of thickness (3) in X, Y directions mutually perpendicular, and taper T and stock removal S0 are determined from the thickness profiles and further the eccentricity delta is determined. The wafer (9) is then transferred onto a positioning plate (13) and is positioned at a position corresponding to the eccentricity delta to finally be fixed on the positioning plate. The wafer, which is fixed thereon, is pressed on a polishing pad (29) and polished, while the wafer is rotated about its center, and the polishing table (28) is rotated and reciprocated relative to its original position. Thereafter, the thickness profiles of the as-polished wafer (9) are again measured and at that point, if the taper is not reduced within the specification therefor, a second eccentricity delta is determined to obtain modified polishing conditions for a corrective single-wafer polishing. <IMAGE> |
