Electronic device, in particular for switching electric currents, for high reverse voltages and with low on-state losses

摘要

A p-n junction is connected between two terminals. The p-n junction is formed between two semiconductor regions of a semiconductor with a breakdown field strength of at least 106 V/cm. A channel region, which adjoins the p-n junction is connected in series with a silicon component between the two terminals. The channel region is provided in a first of the two semiconductor regions. A depletion zone of the p-n junction carries the reverse voltage in the off state of the silicon component. The silicon component is preferably a