| 摘要 |
PURPOSE: To obtain a semiconductor device which can prevent or suppress generation of an area penalty due to formation of a gate body contact region inside a silicon layer in an SOI-DTMOSFET. CONSTITUTION: In the element isolation region of an SOI substrate 1, an STI 10 is formed inside the silicon layer 4. In the end of the element isolation region, a p+ type impurity diffusion region 11 is formed selectively inside the surface of the silicon layer 4 so as to be buried inside the surface in a part of the STI 10. In the element isolation region of the SOI substrate 1, a body region 15 which comes into contact with the side face of the region 11 is formed inside the silicon layer 4. A tungsten plug 14 comes into contact with the region 11 via a barrier film 13, and it comes into contact with a part on the surface and the side face of a gate electrode 9 via the barrier film 13.
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