发明名称 Vertical geometry InGaN LED
摘要 A vertical geometry light emitting diode is disclosed that is capable of emitting light in the red, green, blue, violet and ultraviolet portions of the electromagnetic spectrum. The light emitting diode includes a conductive silicon carbide substrate, an InGaN quantum well, a conductive buffer layer between the substrate and the quantum well, a respective undoped gallium nitride layer on each surface of the quantum well, and ohmic contacts in a vertical geometry orientation.
申请公布号 US7034328(B2) 申请公布日期 2006.04.25
申请号 US20020115522 申请日期 2002.04.03
申请人 CREE, INC. 发明人 DOVERSPIKE KATHLEEN MARIE;EDMOND JOHN ADAM;KONG HUA-SHUANG;DIERINGER HEIDI MARIE;SLATER, JR. DAVID B.
分类号 H01L29/06;H01L21/205;H01L33/00;H01L33/32 主分类号 H01L29/06
代理机构 代理人
主权项
地址