发明名称 |
Group III-nitride light emitting device |
摘要 |
The present invention provides a group III-nitride light emitting device improved in operating voltage and electrostatic discharge characteristics. The group III-nitride light emitting device comprises a lower n-type clad layer, a current spreading layer, an upper n-type clad layer, an active layer and an p-type clad layer formed in their order on a substrate. The current spreading layer includes a SiC layer.
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申请公布号 |
US7301173(B2) |
申请公布日期 |
2007.11.27 |
申请号 |
US20050313967 |
申请日期 |
2005.12.22 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
SHIM HYUN WOOK;YOON SUK KIL;KANG JOONG SEO;WON JONG HAK |
分类号 |
H01L27/15;H01L33/14;H01L33/32 |
主分类号 |
H01L27/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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