发明名称 |
High-reliable semiconductor device using hermetic sealing of electrodes |
摘要 |
The present invention relates to a high-reliable semiconductor device in which electrodes formed on substrates are prevented from deteriorating by sealing the electrodes with a frame member rather than a sealing material. The frame member in the present invention surrounds electrodes formed on the substrates. The inside of the frame member is vacuous or filled with a gas which does not react with the electrodes such as an inert gas and, thereby, the electrodes are prevented from deteriorating by attacks of oxygen or moisture.
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申请公布号 |
US7301243(B2) |
申请公布日期 |
2007.11.27 |
申请号 |
US20050212912 |
申请日期 |
2005.08.29 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
SUGA TADATOMO;ITOH TOSHIHIRO |
分类号 |
H01L23/52;H01L23/48;H01L29/40 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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