发明名称 High-reliable semiconductor device using hermetic sealing of electrodes
摘要 The present invention relates to a high-reliable semiconductor device in which electrodes formed on substrates are prevented from deteriorating by sealing the electrodes with a frame member rather than a sealing material. The frame member in the present invention surrounds electrodes formed on the substrates. The inside of the frame member is vacuous or filled with a gas which does not react with the electrodes such as an inert gas and, thereby, the electrodes are prevented from deteriorating by attacks of oxygen or moisture.
申请公布号 US7301243(B2) 申请公布日期 2007.11.27
申请号 US20050212912 申请日期 2005.08.29
申请人 SHARP KABUSHIKI KAISHA 发明人 SUGA TADATOMO;ITOH TOSHIHIRO
分类号 H01L23/52;H01L23/48;H01L29/40 主分类号 H01L23/52
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