Semiconductor apparatus and its manufacturing method

摘要

A semiconductor apparatus (1) includes a carrier base (3), a first insulating film (4) provided on the carrier base (3), a plurality of single crystalline pillars (5a) provided on the first insulating film (4) and having the semiconductor elements (pMOS, nMOS) formed in their upper surfaces, and a second insulating film (10) formed in the form of a closed loop pattern so as to surround the side surface of the single crystalline pillar (5a). The height of the outer periphery of the upper surface of the single crystalline pillar (5a) becomes gradually smaller as it goes closer to the side surface of the single crystalline pillar (5a), and the outer periphery of the single crystalline pillar forms a tilted surface (5b) continuous to the side surface of the single crystalline pillar.