发明名称 |
Silicon Wafer Having Through-Wafer Vias |
摘要 |
A method of manufacturing a semiconductor device includes providing a semiconductor substrate having first and second main surfaces opposite to each other. A trench is formed in the semiconductor substrate at the first main surface. The trench extends to a first depth position in the semiconductor substrate. The trench is lined with the dielectric material. The trench is filled with a conductive material. An electrical component is electrically connected to the conductive material exposed at the first main surface. A cap is mounted to the first main surface. The cap encloses the electrical component and the electrical connection.
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申请公布号 |
US2008315368(A1) |
申请公布日期 |
2008.12.25 |
申请号 |
US20080202638 |
申请日期 |
2008.09.02 |
申请人 |
ICEMOS TECHNOLOGY CORPORATION |
发明人 |
MACNAMARA CORMAC;BROGAN CONOR;GRIFFIN HUGH J.;WILSON ROBIN |
分类号 |
H01L23/538 |
主分类号 |
H01L23/538 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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