发明名称 Semiconductor device
摘要 A manufacturing method of a display device having an array substrate includes the steps of forming a projection of an organic material in a pixel on the array substrate by patterning a photosensitive material or by inkjet, forming a TFT on the array substrate, wherein a source electrode of the TFT is formed to extend on at least part of the upper surface of the projection, forming an inorganic passivation layer over the TFT and over at least part of the upper surface of the projection, forming an organic passivation layer over the inorganic passivation layer, forming an upper insulating layer over at least part of the organic passivation layer, forming a contact hole in the inorganic passivation layer and the upper insulation layer over the upper surface of the projection, and forming a pixel electrode on the upper insulation layer which contacts the source electrode.
申请公布号 US9362409(B2) 申请公布日期 2016.06.07
申请号 US201514798413 申请日期 2015.07.13
申请人 JAPAN DISPLAY INC. 发明人 Ishigaki Toshimasa;Takahashi Fumio;Kuriyama Hideki
分类号 H01L33/08;H01L27/12;G02F1/1362;H01L29/786 主分类号 H01L33/08
代理机构 Typha IP LLC 代理人 Typha IP LLC
主权项 1. A semiconductor device which is configured to include a substrate, wherein a transistor and a projection are disposed on the substrate; a source electrode of the transistor extends so as to cover at least a part of the projection including at least part of an upper surface of the projection; an inorganic passivation film is formed over the transistor and at least part of the upper surface of the projection; an organic passivation film is formed on the inorganic passivation film over the transistor; the projection is formed by an organic material and is formed separately from the organic passivation film; an upper insulation film is formed over the organic passivation film and on the inorganic passivation film over the upper surface of the projection; an upper line is formed on the upper insulation film: and the upper line is electrically connected to the source electrode through a connection hole formed in the inorganic passivation film and the upper insulation film over the upper surface of the projection.
地址 Tokyo JP