Semiconductor device including an electrode lower layer and an electrode upper layer and method of manufacturing semiconductor device

摘要

The semiconductor device according to the present invention includes a ferroelectric film and an electrode stacked on the ferroelectric film. The electrode has a multilayer structure of an electrode lower layer in contact with the ferroelectric film and an electrode upper layer stacked on the electrode lower layer. The electrode upper layer is made of a conductive material having an etching selection ratio with respect to the materials for the ferroelectric film and the electrode lower layer. The upper surface of the electrode upper layer is planarized.

主权项

1. A semiconductor device, comprising:
a ferroelectric film including PZT; an electrode stacked on the ferroelectric film; the electrode including a multi-layer structure of an electrode lower layer in contact with the ferroelectric film and an electrode upper layer stacked on the electrode lower layer; the electrode upper layer including a conductive material having Titanium and Nitrogen; and a hydrogen barrier film covering surfaces of the ferroelectric film and the electrode; wherein an upper surface of the electrode upper layer is smoother, relatively, than an upper surface of the ferroelectric film; wherein the upper surface of the ferroelectric film is smoother, relatively, than the upper surface of the electrode lower layer; wherein an opening is fabricated as a via hole at the hydrogen barrier film; wherein a barrier metal is disposed covering a surface of the opening; wherein a via plug is disposed filling the barrier metal; wherein an interface between the barrier metal and the via plug is placed under a surface of the hydrogen barrier film in a vertical direction; and wherein the interface is flat.