发明名称 |
Semiconductor device including landing pad |
摘要 |
The semiconductor device includes a plurality of conductive line structures including a plurality of conductive lines spaced apart from a substrate with an insulating film there between and insulating capping layers that are formed on each of plurality of conductive lines; an insulating spacer that is disposed between the plurality of conductive line structures and covers both side walls of each of the plurality of conductive line structures to define a contact hole having a first width in a first direction parallel to an upper surface of the substrate; a contact plug filling a portion of the contact hole; and a landing pad that is connected to the contact plug and vertically overlapping with one of the plurality of conductive line structures. |
申请公布号 |
US9362289(B2) |
申请公布日期 |
2016.06.07 |
申请号 |
US201414581012 |
申请日期 |
2014.12.23 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Park Je-min |
分类号 |
H01L27/108 |
主分类号 |
H01L27/108 |
代理机构 |
Harness, Dickey & Pierce, P.L.C. |
代理人 |
Harness, Dickey & Pierce, P.L.C. |
主权项 |
1. A semiconductor device comprising:
a substrate having a plurality of active areas; a plurality of conductive line structures including a plurality of conductive lines spaced apart from the substrate with an insulating film there between and insulating capping layer formed on each of the plurality of conductive lines; an insulating spacer disposed between the plurality of conductive line structures, the insulating spacer covering both side walls of each of the plurality of conductive line structures to define a contact hole having a first width in a first direction parallel to an upper surface of the substrate; a contact plug filling a portion of the contact hole; and a landing pad connected to the contact plug and vertically overlapping with one of the plurality of conductive line structures, wherein a lower end portion of the landing pad has a second width less than the first width in the first direction and an upper end portion of the landing pad has a third width greater than the first width in the first direction, wherein a fourth width of an upper end portion of the insulating capping layer in the first direction is less than a fifth width of a lower end portion of the insulating capping layer. |
地址 |
Gyeonggi-do KR |