发明名称 Semiconductor device including landing pad
摘要 The semiconductor device includes a plurality of conductive line structures including a plurality of conductive lines spaced apart from a substrate with an insulating film there between and insulating capping layers that are formed on each of plurality of conductive lines; an insulating spacer that is disposed between the plurality of conductive line structures and covers both side walls of each of the plurality of conductive line structures to define a contact hole having a first width in a first direction parallel to an upper surface of the substrate; a contact plug filling a portion of the contact hole; and a landing pad that is connected to the contact plug and vertically overlapping with one of the plurality of conductive line structures.
申请公布号 US9362289(B2) 申请公布日期 2016.06.07
申请号 US201414581012 申请日期 2014.12.23
申请人 Samsung Electronics Co., Ltd. 发明人 Park Je-min
分类号 H01L27/108 主分类号 H01L27/108
代理机构 Harness, Dickey & Pierce, P.L.C. 代理人 Harness, Dickey & Pierce, P.L.C.
主权项 1. A semiconductor device comprising: a substrate having a plurality of active areas; a plurality of conductive line structures including a plurality of conductive lines spaced apart from the substrate with an insulating film there between and insulating capping layer formed on each of the plurality of conductive lines; an insulating spacer disposed between the plurality of conductive line structures, the insulating spacer covering both side walls of each of the plurality of conductive line structures to define a contact hole having a first width in a first direction parallel to an upper surface of the substrate; a contact plug filling a portion of the contact hole; and a landing pad connected to the contact plug and vertically overlapping with one of the plurality of conductive line structures, wherein a lower end portion of the landing pad has a second width less than the first width in the first direction and an upper end portion of the landing pad has a third width greater than the first width in the first direction, wherein a fourth width of an upper end portion of the insulating capping layer in the first direction is less than a fifth width of a lower end portion of the insulating capping layer.
地址 Gyeonggi-do KR